Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 1, Issue 6, Pages 945-950Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.9b00122
Keywords
graphene; diodes; edge contact; one-dimensional; radio frequency; flexible
Funding
- European Commission [785219, 607904-13-SPINOGRAPH]
- German Science Foundation (DFG) [NE1633/3]
- DFG Project HiPeDi [WA4139/1-1]
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A novel one-dimensional geometry for metal- insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 which acts as barrier material. The diodes demonstrate ultrahigh current density since the transport in the graphene and through the barrier is in-plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high-frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.
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