Journal
ACS APPLIED ELECTRONIC MATERIALS
Volume 1, Issue 11, Pages 2406-+Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsaelm.9b00560
Keywords
artificial synapses; EDL; IGZO; CS; STDP; emotional state
Funding
- National Natural Science Foundation of China [61674101]
- Shanghai Science and Technology Innovation Plan Project [16JC1403700]
- Shanghai Science and Technology Commission [17DZ2291500]
- Program of Shanghai Academic/Technology Research Leader [18XD1424400]
- Shuguang Program - Shanghai Education Development Foundation
- Shanghai Municipal Education Commission
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Here, a three-terminal optoelectronic synapse is simply fabricated based on chitosan (CS)/indium gallium zinc oxide (IGZO) with a combination of electrical and optical simulations, which successfully emulates the key features of biological synapses of learning and memory behavior, in particular the reproduction of the typical Hebbian spike-time dependence plasticity (STDP) rule and 2794.6% of the maximum paired-pulse facilitation (PPF) under electrical stimulation. Creating an analogy to device characteristics, more importantly, memory behavior was studied with changes of the human internal state (comfortable and uncomfortable) and the external environment stimuli (quiet and noise); this showed the best results, longest forgetting time and good memory effect, under a comfortable internal state and a quiet environment. Our results suggest that solution-gated IGZO-based electric-double-layer transparent phototransistor transistors could act as platforms for synaptic and human behavior simulation.
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