Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 29, Issue 2, Pages 1327-1332Publisher
SPRINGER
DOI: 10.1007/s10854-017-8038-4
Keywords
-
Categories
Funding
- Department of Science and Technology (DST), Government of India [SR/FTP/PS-36/2010]
- National Research Foundation (NRF) vide Korean government (MSIP) [2014R1A2A1A12066298, 2016R1D1A1B04935798]
- National Research Foundation of Korea [2016R1D1A1B04935798, 2014R1A2A1A12066298] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
In this work, pure and Ni-doped ZnO nanostructures (NSs) with different concentrations of Ni (2, 4, 6%) were successfully prepared via solution combustion method. The TEM photograph shows the formation of flake-like structures with the decrease in size of NSs as the dopant concentration is increased. XRD investigation shows the hexagonal wurtzite structure of doped and undoped ZnO nanostructures with a NiO peak (200) as secondary phase for 4 and 6% dopant concentration level. Broadening of spectra of ZnO around 480 cm(-1) in FTIR spectra is observed with the increase of dopant concentration. UV-Visible spectra show the increase in absorbance when the dopant level (Ni2+) is increase from 2 to 4% in ZnO and decrease in absorbance with further increase in dopant level to 6%. An increase in energy band gap is observed in Ni (6%)-doped ZnO due to due to the sp-d interactions taking place between the band electrons and the localised d electrons of Ni2+ ions (Burstein-Moss effect). I-V characteristics reveal the increase in current with the increase in dopant level from 2 to 4% and decrease in current when the dopant level is further increased to 6% which is in agreement with the Burstein-Moss effect.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available