Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 28, Issue 7, Pages 5652-5662Publisher
SPRINGER
DOI: 10.1007/s10854-016-6236-0
Keywords
-
Categories
Funding
- Zhejiang Provincial Natural Science Foundation [LY17E020006]
- Natural Science Foundation of China [51272230, 50672084]
- Fundamental Research Funds for the Central Universities of China [2016QNA4009]
Ask authors/readers for more resources
The Ag/BiFeO3 composite thin films were prepared by sol-gel technology on ITO/glass substrate. Most of the Ag+ ions were reduced to form Ag nanoparticles in the thin film. Some Ag+ ions were doped into the BiFeO3 lattice to replace Bi, forming Ag doped BiFeO3. The average size of the Ag nanoparticles is 4-8 nm. The dielectric constant of the BiFeO3 thin film sintered at 550 A degrees C with the molar ratio of Ag/Fe of 0.2 was enhanced to 139, which was nearly twice as high as that of pure BiFeO3. The dielectric loss kept at a low value of 0.15. The composite thin film also showed a typical ferromagnetism with the saturation magnetization of 2.2 emu/cm(3). The Ag/BiFeO3 composite thin film showed typical ferromagnetism and high permittivity simultaneously.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available