Determination of the optical constants of As-Se-Ag chalcogenide thick films with high precision for optoelectronics applications

Thin films of (As50Se50)(100-x)Ag-x (with 0 ae x ae 25 s) metal-chalcogenide glasses were deposited onto glass substrates by thermal evaporation technique under high vacuum (10(-6) mbar). The optical constants as well as the average thickness of the studied films are determined by the Swanepoel envelope method which is based on the optical transmission spectra measured in the spectral range 300-2500 nm. This method enables the transformation of the optical-transmission spectrum of a thin film of wedge-shaped thickness into the spectrum of a uniform film, whose thickness is equal to the average thickness of the non-uniform layer. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-oscillator model. The optical absorption edge is described using the non-direct transition model proposed by Tauc relation. Analysis of the optical data revealed that an addition of Ag in the range from 0 to 25 at.% to the (As50Se50)(100-x) binary alloys affected the optical parameters of the investigated thin films. For instance, the optical band gap decreased from 1.661 to 1.441 eV with increasing the Ag content from 0 to 25 at.%. The results were discussed in terms of Mott and Davis model as well as chemical-bond approach.