3.8 Proceedings Paper

Metallic Source/Drain Ge-Based Charge-Trapping Memory Cells

Journal

2019 SILICON NANOELECTRONICS WORKSHOP (SNW)
Volume -, Issue -, Pages 59-60

Publisher

IEEE
DOI: 10.23919/snw.2019.8782895

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Schottky barrier source/drain produces particular ambipolar conduction and strong hot-carrier generation in CMOS devices. This work presents a new metallic source/drain Ge-based charge-trapping cells for memory applications. Two-dimensional simulations were employed to elucidate the source-side injection programming of Ge-based memory cells and discuss the differences of cell characteristics between the Ge and Si cells.

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