Journal
JOURNAL OF MATERIALS SCIENCE
Volume 52, Issue 19, Pages 11306-11313Publisher
SPRINGER
DOI: 10.1007/s10853-017-1297-x
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Funding
- Romanian Ministry of Research and Innovation [PN-III-16-48-02]
- European Union (CPER-FEDER) [39126, 37339]
- Region Bretagne
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Bi1.5-xZn0.92-yNb1.5O6.92-delta (BZN) thin films were grown by pulsed laser deposition on two different Pt-covered substrates, namely textured {111} Pt/TiO2/SiO2/(100) Si substrate (Pt/Si) and epitaxial {111} Pt/R-plane sapphire substrate (Pt/sapphire). In both cases, the BZN films present {111} and {100} out-of-plane orientations, in relative ratios of 65: 35 on Pt/Si and 80: 20 on Pt/sapphire, respectively. The film grown on Pt/Si is textured, while the film deposited on Pt/sapphire presents epitaxial-like relationships with the substrate, for both out-of-plane orientations. Dielectric measurements were taken on both types of thin films, using Pt/BZN/Pt planar capacitor structures. The BZN/Pt/sapphire film presents higher dielectric constant (245 at 100 kHz) and higher tunability (12% at 600 kV/cm) than the BZN/Pt/Si film (200; 6%), while the dielectric losses values are nearly same (similar to 0.05).
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