Journal
PHYSICAL REVIEW B
Volume 100, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.100.235423
Keywords
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Funding
- VILLUM FONDEN through the Young Investigator Program [15375]
- VILLUM FONDEN through the Centre of Excellence for Dirac Materials [11744]
- Danish Council for Independent Research, Natural Sciences under the Sapere Aude program [DFF-4002-00029, DFF-6108-00409]
- Aarhus University Research Foundation
- Swedish Research Council [VR 201804252]
- Villum Fonden [00011744, 00015375] Funding Source: researchfish
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In this work, we provide an effective model to evaluate the one-electron dipole matrix elements governing optical excitations and the photoemission process of single-layer (SL) and bilayer (BL) transition metal dichalcogenides. By utilizing a k . p Hamiltonian, we calculate the photoemission intensity as observed in angle-resolved photoemission from the valence bands around the (K) over bar valley of MoS2. In SL MoS2, we find a significant masking of intensity outside the first Brillouin zone, which originates from an in-plane interference effect between photoelectrons emitted from the Mo d orbitals. In BL MoS2, an additional interlayer interference effect leads to a distinctive modulation of intensity with photon energy. Finally, we use the semiconductor Bloch equations to model the optical excitation in a time- and angle-resolved pump-probe photoemission experiment. We find that the momentum dependence of an optically excited population in the conduction band leads to an observable dichroism in both SL and BL MoS2.
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