Journal
JOURNAL OF MATERIALS RESEARCH
Volume 32, Issue 21, Pages 4025-4040Publisher
SPRINGER HEIDELBERG
DOI: 10.1557/jmr.2017.324
Keywords
epitaxy; bonding; optoelectronic
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Funding
- National Research Foundation Singapore through the Singapore MIT Alliance for Research and Technology's Low Energy Electronic Systems (LEES) IRG
- SMART Innovation Center
- Silicon Technologies Center of Excellence (Si-COE)
- SMA3 Fellowship
- silicon photonics group, Optoelectronics Research Center at the University of Southampton
- [NRF-CRP12-2013-04]
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Integration of photonic devices on silicon (Si) substrates is a key method in enabling large scale manufacturing of Si-based photonic-electronic circuits for next generation systems with high performance, small form factor, low power consumption, and low cost. Germanium (Ge) is a promising material due to its pseudo-direct bandgap and its compatibility with Si-CMOS processing. In this article, we present our recent progress on achieving high quality germanium-on-silicon (Ge/Si) materials. Subsequently, the performance of various functional devices such as photodetectors, lasers, waveguides, and sensors that are fabricated on the Ge/Si platform are discussed. Some possible future works such as the incorporation of tin (Sn) into Ge will be proposed. Finally, some applications based on a fully monolithic integrated photonic-electronic chip on an Si platform will be highlighted at the end of this article.
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