Journal
JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE
Volume 27, Issue 1, Pages 116-123Publisher
SPRINGER
DOI: 10.1007/s11665-017-3108-6
Keywords
commercial pure tantalum; EIS; Hank's physiological solution; SEM
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In this study, various electrochemical measurements were used to evaluate the passive and semiconducting properties of commercially pure tantalum (Ta) in Hank's physiological solution at 310 K (37 A degrees C). Potentiodynamic polarization and electrochemical impedance spectroscopy results show that the passivation of pure Ta immersed in Hank's physiological solution improves over time. Mott-Schottky (M-S) tests indicate that the passive layers of pure Ta in Hank's physiological solution behave as n-type semiconductors and longer immersion times do not lead to any inversion of semiconducting behavior. Additionally, M-S tests show that as the immersion time increases, the donor density of the passive layer decreases. Finally, scanning electron microscope micrographs and energy-dispersive spectroscopy results reveal that Ta is less likely to experience significant pitting or buildup of undesirable corrosion products after longer immersion times in this physiological solution.
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