Journal
JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 35, Issue 4, Pages 722-726Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2016.2593942
Keywords
Germanium; integrated optoelectronics; optical communications; photodetectors
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We demonstrate 100-Gbps silicon-contacted germanium waveguide p-i-n photodetectors integrated on imec's silicon photonics platform. The performance of 14 and 20 mu m long devices is compared. The responsivity of the devices is 0.74 and 0.92 A/W at 1550 nm, respectively.
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