4.7 Article

Over 67 GHz Bandwidth and 1.5 V Vπ InP-Based Optical IQ Modulator With n-i-p-n Heterostructure

Journal

JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 35, Issue 8, Pages 1450-1455

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2016.2639542

Keywords

Electro-optic modulators; indium compounds; Mach-Zehnder modulators; semiconductor waveguide

Ask authors/readers for more resources

We report novel high-bandwidth InP-based Mach-Zehnder modulator and in-phase/quadrature (IQ) modulators that we realized by combining an n-i-p-n heterostructure and a capacitively loaded traveling wave electrode. The extremely low electrical and optical loss structure enhances the 3-dB electro-optic bandwidth of over 67 GHz without degrading other properties such as driving voltage and optical loss. The modulator also exhibits a static extinction ratio of over 24 dB with a V pi of less than 1.5 V for the entire C-band. Furthermore, we demonstrate the first 120-Gbaud rate IQ modulation without optical pre equalization, and 100-Gb/s non-return-to-zero on-off keying modulation with a dynamic extinction ratio of over 10 dB.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.7
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available