4.7 Article Proceedings Paper

High-Power InP-Based Waveguide Integrated Modified Uni-Traveling-Carrier Photodiodes

Journal

JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 35, Issue 4, Pages 717-721

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2016.2591266

Keywords

High-linearity; high-power; high-speed; modified uni-traveling-carrier (MUTC); photodiodes (PD)

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We demonstrate monolithic InP-based high-power high-speed waveguide integrated single and balanced modified UTC photodetectors. The single PD chip generates maximum RF output power levels of 8.9 dBm to 5.1 dBm in the frequency range between 60 GHz and 120 GHz. The balanced PD chip has a 3 dB-bandwidth of 80 GHz and generates 2 dBm RF output power at this frequency.

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