Journal
JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume 35, Issue 24, Pages 5306-5310Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JLT.2017.2766266
Keywords
Germanium; integrated optoelectronics; optical interconnections; photodetectors
Funding
- National Key Research and Development Program of China [2017YFA0206404]
- National Natural Science Foundation [61604146, 61435013, 61534005]
- Beijing Science and Technology Commission [Z151100003315019]
- Beijing Natural Science Foundation [4162063]
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High-performance normal-incidence p-i-n Ge photodetectors for 1550 and 1310 nm were grown by selective epitaxial growth on SOI substrate with in situ thermal annealing and surface Si passivation. Bulk leakage current density and surface leakage density as low as 3.4 mA/cm(2) and 0.4 mu A/cm are achieved under -1 V, respectively. Resonance optical responsivity at 1550 and 1310 nm are 0.27 and 0.59 A/W under zero-bias, respectively. A 3-dB bandwidth as high as 48 GHz is obtained at -3 V. Clear openeye diagrams at 40 Gbps are demonstrated under zero-bias at 1550 nm.
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