Journal
ACS APPLIED NANO MATERIALS
Volume 2, Issue 12, Pages 7810-7818Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsanm.9b01591
Keywords
transitional metal dichalcogenide; CS2; field-effect transistor; atomic layer deposition; interface
Funding
- National Key Research and Development Program of China [2018YFB2202800]
- Shanghai Municipal Science and Technology Commission [18JC1410300]
- National Natural Science Foundation of China [61904033, 61522404, 61704030]
- Support Plans for the Youth Top-Notch Talents of China
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The large-scale two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention in the fields of high-performance switching and sensing devices, and various synthesis approaches have been proposed and applied for effective device integration and circuit-level application. However, such synthetic TMDC thin films have intrinsic limitations due to a mass of sulfur vacancies after a series of high-temperature processing, which has significantly restricted further implementation in high-performance nanoelectronics applications. Here, we proposed a method of optimizing the defects of sulfur vacancies by using CS2 treatment on the large-area MoS2 film synthesized by atomic layer deposition (ALD). Sulfur atoms introduced by CS2 decomposition at high temperature fill the vacancies in MoS2, generating a more robust crystal lattice structure. The involvement of CS2 treatment has significantly improved the stoichiometry and crystallinity which is confirmed by X-ray photoelectron spectroscopy and Raman characterizations. The top-gate MoS2 transistors fabricated based on the CS2-treated MoS2 film have shown enhanced electrical performance including larger on/off current ratio and more decent carrier mobility as compared to the devices built on the nontreated film. Our results can pave a promising pathway for the optimization of the large-area synthetic TMDC thin films in future switching and sensing devices toward higher level system and circuit applications.
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