Journal
NATURE ELECTRONICS
Volume 2, Issue 12, Pages 580-586Publisher
NATURE RESEARCH
DOI: 10.1038/s41928-019-0338-7
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Funding
- NSF/AFOSR EFRI 2DARE programme
- ASCENT, one of six centres in JUMP, a Semiconductor Research Corporation (SRC) programme - DARPA
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Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are potentially of use in non-volatile memory technology, but they suffer from short retention times, which limits their wider application. Here, we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (alpha-In2Se3), is used as the channel material in the device. alpha-In2Se3 was chosen due to its appropriate bandgap, room-temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers and its potential for large-area growth. A passivation method based on the atomic layer deposition of aluminium oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 10(8), a maximum on current of 862 mu A mu m(-1) and a low supply voltage.
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