Journal
MATERIALS RESEARCH-IBERO-AMERICAN JOURNAL OF MATERIALS
Volume 22, Issue 6, Pages -Publisher
UNIV FED SAO CARLOS, DEPT ENGENHARIA MATERIALS
DOI: 10.1590/1980-5373-MR-2019-0380
Keywords
InN nanodots; magnetron sputtering; highly preferred orientation; electrical characteristic
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Funding
- National Natural Science Foundation of China [61674052, 11404097]
- Key Scientific Research Projects of Higher Education Institutions of Henan Provinc, China [20A140012]
- Innovation and Entrepreneurship Training Program for Provincial Undergraduates of Henan Province [S201910464024]
- Student Research Training Program of Henan University of Science and Technology [2019208]
- Student Research Training Program of School of Physics and Engineering of Henan University of Science and Technology [WLSRTP201910, WLSRTP201802]
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In this work, we reported the effects of sputtering power on the structure, optical and electrical properties of InN nanodots prepared on Al2O3 substrate by magnetron sputtering.The results showed that the as-grown InN films exhibited uniform nanodot morphology and the size of the InN nano grains increased with the sputtering power was increased. The InN nanodot exhibited highly c-axis prefered orientation with mainly InN(002) diffraction. The optical band gap of InN samples showed an decreasing trend with the increase in sputteirng power. Moreover, the electrical properties of the InN samples were discussed in detail by hall effect and the carrier concentration and mobility could be adjusted from 3.233x1019 to 1.655x1020 cm-3 and 1.151 to 10.101 cm2/v.s, respectively. These results will lay a good fundation for the applicaion of InN material in the field of gas sensers and light emitting diodes.
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