Journal
2019 18TH INTERNATIONAL CONFERENCE ON OPTICAL COMMUNICATIONS AND NETWORKS (ICOCN)
Volume -, Issue -, Pages -Publisher
IEEE
DOI: 10.1109/icocn.2019.8934713
Keywords
Heterostructure; 2D material; GaSe; GaSb
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In recent years, there have been increasing interests in 2D materials, as a result of its outstanding basic properties and enormous potentiality of applications in photoelectric devices. In this work, a vertical 2D-GaSe/3D-GaSb heterostructure was fabricated by epitaxial growth and the device exhibits good photosensitivity and fast response speed of microsecond, which reveals a promising candidate for intergenerational development of photodetector.
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