Journal
2019 12TH INTERNATIONAL WORKSHOP ON THE ELECTROMAGNETIC COMPATIBILITY OF INTEGRATED CIRCUITS (EMC COMPO 2019)
Volume -, Issue -, Pages 22-24Publisher
IEEE
DOI: 10.1109/emccompo.2019.8919817
Keywords
HEMP; RF front-end; integrated circuits; transient response; pulsed conducted injection; effect mechanism
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Strong current response is always induced according to the antennas with the operating frequency below 300MHz exposed to High-altitude electromagnetic pulse (HEMP), which may cause severe damages of radio frequency (RF) sub-system by entering into the core RF integrated circuit (IC) components or devices along the RF front-end channel step by step. In order to monitor the transient response of each RF component port in front-end channel, an open VHF communication system is designed. Based on this system, we observe the transient response of all key RF IC components along receiving channel by using pulsed conducted injection (PCI) test respectively. Finally, necessary performance test and effect mechanism analysis are made after PCI tests. The experimental results illustrates a series of interesting conclusions for further study on HEMP effect mechanism research and protection design of the RF front-end subsystems.
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