Journal
2019 19TH NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS 2019)
Volume -, Issue -, Pages -Publisher
IEEE
DOI: 10.1109/nvmts47818.2019.9043368
Keywords
FRAM; Depolarization; Retention; Wake-up; Memory Reliability
Funding
- German Ministry of Economic Affairs and Energy (BMWi) project [16IPCEI310]
- Electronic Component Systems for European Leadership Joint Undertaking [692519]
- European Union
- German Science Foundation (DFG)
Ask authors/readers for more resources
The influence of depolarization and its role in causing data retention failure in ferroelectric memories is investigated. Ferroelectric Hf0.5Zr0.5O2 thin films 8 nm thick incorporated into a metal-ferroelectric-metal capacitor are fabricated and characterized with varying thicknesses of an Al2O3 interfacial layer. The magnitude of the depolarization field is adjusted by controlling the thickness of the Al2O3 layer. The initial polarization and the change in polarization with electric field cycling is strongly impacted by the insertion of Al2O3 within the device stack. Transient polarization loss is shown to get worse with larger depolarization fields and data retention is evaluated up to 85 degrees C.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available