Journal
SMALL METHODS
Volume 3, Issue 12, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smtd.201900349
Keywords
epitaxial growth; heterojunctions; photodetectors; self-driven; topological insulators
Funding
- National Natural Science Fund [61875138, 61435010, 6181101252]
- Science and Technology Innovation Commission of Shenzhen [KQTD2015032416270385, JCYJ20150625103619275, JCYJ20170811093453105]
- NSFC-Guangdong Joint Project [U1801254]
- Instrumental Analysis Center of Shenzhen University (Xili Campus)
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Heterojunctions, composed of different materials, are widely explored in optoelectronic devices thanks to their unique advantages, such as high carrier mobility and excellent photoelectronic characteristics. In this work, Bi2Se3/Te@Se heterojunctions (Bi2Se3/Te@Se) are synthesized through the epitaxial growth of Bi2Se3 nanosheets (Bi2Se3 NTs) on tellurium@selenium nanotubes (Te@Se NTs) by using a low-cost and facile solvothermal process. Bi2Se3/Te@Se are further applied in high-performance photoelectrochemical (PEC)-type photodetection due to the advantages of broadband optical response and fast carrier relaxation time. The PEC results demonstrate that the as-prepared photodetectors have pronounced photoresponse behavior from the ultraviolet to visible band with self-driven ability and excellent long-term stability. It is anticipated that this work provides a new strategy for epitaxial growth of topological insulators on semiconductors for designing new heterojunctions toward high-performance optoelectronic devices.
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