Journal
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
Volume -, Issue -, Pages -Publisher
IEEE
DOI: 10.1109/iedm19573.2019.8993592
Keywords
-
Categories
Funding
- Ministry of Science and Technology of Taiwan, ROC [MOST 107-2119-M-009-019, 108-2634-F-009005]
- Research of Excellence program [MOST-107-2633-E-009003]
- ITRI
Ask authors/readers for more resources
A modeling framework for ferroelectric tunnel junctions (FTJs) that considers nonpolar interfacial layers (ILs), multi-domain polarization, and complete ferroelectric/capacitive/tunneling currents simultaneously is proposed. This model explains both read and write operations including the controversial switching polarities of FTJ. We also provide useful guidelines for optimizing FTJ performance where the location of IL and the effective thickness ratio between ferroelectric and interfacial layers are found to be most critical.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
