Journal
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
Volume -, Issue -, Pages -Publisher
IEEE
DOI: 10.1109/iedm19573.2019.8993526
Keywords
-
Categories
Funding
- NSF DMREF [1534303]
- AFOSR [FA9550-17-1-0048, FA9550-18-1-0529, FA9550-18-10479]
- NSF NNCI program [ECCS-1542081]
- MRSEC program [DMR-1719875]
- MRI [DMR-1338010]
Ask authors/readers for more resources
We demonstrate record-high performance in normally-off single and multi-fin beta-Ga2O3 vertical power transistors. The effective channel mobility is significantly improved up to similar to 130 cm(2)/V.s with a post-deposition annealing process. With a fin-channel width of 0.15 mu m, true normally off operation is achieved with a threshold voltage of >1.5 V; a record-high breakdown voltage of 2.66 kV (at V-gs=0 V) and a specific on-resistance of 25.2 m Omega.cm(2) are obtained in multi-fin devices, corresponding to a Baliga's figure-of-merit of 280 MW/cm(2), which is the highest among all Ga2O3 transistors. Devices with (100)-like fin-channel sidewalls exhibit the lowest interface trapped charge density and a significantly higher current than other fin orientations. These findings offer important insights on the development of Ga2O3 MOSFETs and show great promise of Ga2O3 vertical power devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available