Journal
2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE)
Volume -, Issue -, Pages -Publisher
IEEE
DOI: 10.1109/isne.2019.8896617
Keywords
Dielectric breakdown; h-BN; Layer-by-layer breakdown; Pore formation; Percolation model; SILC; TDDB
Categories
Funding
- Ministry of Education (MOE) Singapore
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Hexagonal boron nitride (h-BN) has emerged as one of the promising dielectric materials for the practical realization of graphene nanoelectronics. Although numerous stacks of outperforming 2D material-based transistors have already been demonstrated, very limited insights are available on the reliability aspects of h-BN as a gate dielectric for 2D nanoelectronics. In this work, we review the key similarities and differences in the degradation and breakdown of conventional (SiO2, HfO2) and emerging 2D (h-BN) dielectrics. Some of the key emerging potential applications of h-BN arc also highlighted.
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