Journal
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume 7, Issue 1, Pages 829-836Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JEDS.2019.2911085
Keywords
Self-heating effect; FinFETs; hot carrier injection; ballistic transport
Categories
Funding
- Zhejiang Provincial Natural Science Foundation of China [LZ19F040001]
- Key Research and Development Program of Zhejiang Province [2019C01158]
- National Science and Technology Major Project of the Ministry of Science and Technology of China [2017ZX02315001-007]
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FinFET and fully depleted silicon-on-insulator (FDSOI) structures could further improve transistor's performance and, however, also introduce some new problems, especially the increasingly severer self-heating effect (SHE). In this paper, by utilizing the ultra-fast sub-1 ns measurement technique, I-V characteristics of FinFETs and FDSOI devices at different switch speeds are obtained. Furthermore, dynamic SHE phenomena as well as the time-resolved channel temperature change during transistor's switch on and off are able to be experimentally observed. And, more accurate device parameters like ballistic transport efficiency are extracted by the ultra-fast measurements. Moreover, it is experimentally confirmed that several nanoseconds are required to heat up the channel of transistors by the direct electrical characterization and, therefore, in sub-10 nm devices, SHE might be alleviated under high frequency/speed operations.
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