Temperature Sensors Based on Metal-Silicon Microstructure for Microsystem Technology

The basis of the research of this work is to predict the characteristics of sensors of the thermal quantities based on silicon whiskers admixture with B & Ni impurities. In these samples, the concentration of the transport impurity of boron corresponds to the phase transition of the metal-insulator in silicon from the metallic side. On the basis of experimental temperature dependences of resistance of microcrystals Si (B, Ni) with a concentration of boron N-B approximate to 1x10(19) cm(-3) and resistivity crystals rho(300 kappa) = 0.007 Ohmx cm in the temperature range 4,2-300 K, the linear dependence of the resistance versus temperature with positive values of the temperature resistance coefficient is shown. Determined by the temperature of liquefied helium maximum magnetoresistance reaches no more than 4% in magnetic fields with induction do14T. Proposed thermoresistive sensor is working in harsh operating environment and is resistant to the influence of destabilizing factors.