Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 47, Issue 6, Pages 3254-3259Publisher
SPRINGER
DOI: 10.1007/s11664-017-6020-9
Keywords
Thermoelectric conversion; sulfides; DFT calculations; high-throughput screening
Categories
Funding
- Murata Science Foundation
- Thermoelectric Society of Japan
- JAIST Research Grant
Ask authors/readers for more resources
The electron transport properties of 809 sulfides have been investigated using density functional theory (DFT) calculations in the relaxation time approximation, and a material design rule established for high-performance sulfide thermoelectric (TE) materials. Benchmark electron transport calculations were performed for Cu12Sb4S13 and Cu26V2Ge6S32, revealing that the ratio of the scattering probability of electrons and phonons (kappa(lat)tau(-1)(el)) was constant at about 2 x 10(14) W K-1 m(-1) s(-1). The calculated thermopower S dependence of the theoretical dimensionless figure of merit ZT (DFT) of the 809 sulfides showed a maximum at 140 mu V K-1 to 170 mu V K-1. Under the assumption of constant kappa(lat)tau(-1)(el) of 2 x 10(14) W K-1 m(-1) s(-1) and constant group velocity v of electrons, a slope of the density of states of 8.6 states eV(-2) to 10 states eV(-2) is suitable for high-ZT sulfide TE materials. The Lorenz number L dependence of ZT (DFT) for the 809 sulfides showed a maximum at L of approximately 2.45 x 10(-8) V-2 K-2. This result demonstrates that the potential of high-ZT sulfide materials is highest when the electron thermal conductivity kappa(el) of the symmetric band is equal to that of the asymmetric band.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available