Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 46, Issue 11, Pages 6609-6616Publisher
SPRINGER
DOI: 10.1007/s11664-017-5704-5
Keywords
AZO; solution synthesis; spin coating; transparent conducting oxides; rapid thermal annealing
Ask authors/readers for more resources
Transparent conducting oxide films with optimized dopant molar ratio have been prepared with limited pre- and postdeposition annealing duration of 10 min. Multiple aluminum zinc oxide (AZO) layers were spin-coated on ordinary glass substrates. The predeposition consolidation temperature and dopant molar ratio were optimized for electrical conductivity and optical transparency. Next, a group of films were deposited on Corning glass substrates from precursor solutions with the optimized dopant ratio, followed by postdeposition rapid thermal annealing (RTA) at different temperatures and in controlled environments. The lowest resistivity of 10.1 x 10(-3) Omega cm was obtained for films receiving RTA at 600A degrees C for 10 min each in vacuum then in N-2-5%H-2 environment, while resistivity of 20.3 x 10(-3) Omega cm was obtained for films subjected to RTA directly in N-2-5%H-2. Optical measurements revealed average total transmittance of about 85% in the visible region. A direct allowed transition bandgap was determined based on the absorption edge with a value slightly above 3.0 eV, within the typical range for semiconductors. RTA resulted in desorption of oxygen with enhanced carrier concentration and crystallinity, which increased the carrier mobility with decreased bulk resistivity while maintaining the required optical transparency.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available