Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 47, Issue 2, Pages 998-1002Publisher
SPRINGER
DOI: 10.1007/s11664-017-5954-2
Keywords
The free growth method; Bi1.8Sb0.2Te2.85Se0.15 alloy; SbI3 doping; electrical transport property
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Funding
- National Natural Science Foundation of China [51371073]
- National Key Basic Research Program of China [2012CB825702]
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Thermoelectric technology is regarded as one of the most promising direct power generation techniques via thermoelectric materials. However, the batch production and scale-up application are hindered because of the high-cost and poor performance. In this work, we adopt the free growth method to synthesize a series of the bulk materials of SbI3-doped Bi1.8Sb0.2Te2.85Se0.15 alloys. The structural and component investigations as well as the electrical properties characterization are carried out. The results show that SbI3 promotes the formation of Te-rich regions in the matrix. In addition, the synergistically optimized electrical conductivity and Seebeck coefficient are attained by controlling the SbI3 doping concentration. Thus, the sample with 0.30 wt.% SbI3 displays a highly increased power factor of similar to 13.57 mu W cm(-1) K-2, which is nearly 21 times higher than that of the undoped one. Moreover, the free growth method is reproducible, convenient and economical. Therefore, it has great potential as a promising technology for the batch synthesis.
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