Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 46, Issue 4, Pages 1963-1970Publisher
SPRINGER
DOI: 10.1007/s11664-016-5239-1
Keywords
sol-gel method; thin films; alpha-MoO3; nanostructure; photovoltaic
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Transparent orthorhombic molybdenum trioxide (alpha-MoO3) thin films were prepared on glass substrates by sol-gel dip coating technique of a quality comparable to those prepared by more sophisticated techniques regarded as very costly and difficult to carry out. The prepared films were annealed in air at different temperatures in the range of 150-350A degrees C. X-ray diffraction analysis of the films prepared at 250A degrees C and 350A degrees C confirmed the formation of a single-phase of MoO3 in an orthorhombic crystal system (alpha-MoO3). Scanning electron microscopy of the films annealed at 350A degrees C indicated a stack of nano-layers with thickness of approximately 30 nm-40 nm. Fourier transform infrared transmittance analysis revealed the Mo=O stretching vibration, which is an indicator of the layered orthorhombic MoO3 phase. Energy dispersive x-ray analysis confirmed the existence of Mo and O in the deposited films. A maximum optical transmittance of 82% in the visible range was obtained from the films annealed at 350A degrees C. The band gap value of the films was evaluated and it was in the range of 3.28 eV-3.40 eV. The obtained results showed that the alpha-MoO3 thin films prepared at 350A degrees C exhibit good structural, chemical, and optical properties, which might be of interest to the photovoltaic and optoelectronic devices.
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