Related references
Note: Only part of the references are listed.Trilayer Tunnel Selectors for Memristor Memory Cells
Byung Joon Choi et al.
ADVANCED MATERIALS (2016)
Ozone-Based Sequential Infiltration Synthesis of Al2O3 Nanostructures in Symmetric Block Copolymer
Jacopo Frascaroli et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density
Ahmed Al-Haddad et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Strategies for Inorganic Incorporation using Neat Block Copolymer Thin Films for Etch Mask Function and Nanotechnological Application
Cian Cummins et al.
ADVANCED MATERIALS (2016)
Ultrathin AAO Membrane as a Generic Template for Sub-100 nm Nanostructure Fabrication
Hossein Robatjazi et al.
CHEMISTRY OF MATERIALS (2016)
Role of Local Chemical Potential of Cu on Data Retention Properties of Cu-Based Conductive-Bridge RAM
Jiyong Woo et al.
IEEE ELECTRON DEVICE LETTERS (2016)
HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations
Boubacar Traore et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)
Interface engineered HfO2-based 3D vertical ReRAM
Boris Hudec et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2016)
Moisture effects on the electrochemical reaction and resistance switching at Ag/molybdenum oxide interfaces
Chuan-Sen Yang et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2016)
3D resistive RAM cell design for high-density storage class memory-a review
Boris Hudec et al.
SCIENCE CHINA-INFORMATION SCIENCES (2016)
Stack optimization of oxide-based RRAM for fast write speed (<1 μs) at low operating current (<10 μA)
C. Y. Chen et al.
SOLID-STATE ELECTRONICS (2016)
Two-step cycle for producing multiple anodic aluminum oxide (AAO) films with increasing long-range order
E. Choudhary et al.
RSC ADVANCES (2016)
Self-assembled nanostructured resistive switching memory devices fabricated by templated bottom-up growth
Ji-Min Song et al.
SCIENTIFIC REPORTS (2016)
Design Strategy for Integrating DSA Via Patterning in sub-7 nm Interconnects
Ioannis Karageorgos et al.
DESIGN-PROCESS-TECHNOLOGY CO-OPTIMIZATION FOR MANUFACTURABILITY X (2016)
Thickness and Microdomain Orientation of Asymmetric PS-b-PMMA Block Copolymer Films Inside Periodic Gratings
Federico Ferrarese Lupi et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Resistive Switching in High-Density Nanodevices Fabricated by Block Copolymer Self-Assembly
Jacopo Frascaroli et al.
ACS NANO (2015)
How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?
Felix Messerschmitt et al.
ADVANCED FUNCTIONAL MATERIALS (2015)
Formation and Movement of Cationic Defects During Forming and Resistive Switching in SrTiO3 Thin Film Devices
Christian Lenser et al.
ADVANCED FUNCTIONAL MATERIALS (2015)
Physics of the Switching Kinetics in Resistive Memories
Stephan Menzel et al.
ADVANCED FUNCTIONAL MATERIALS (2015)
Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
Jung Ho Yoon et al.
ADVANCED MATERIALS (2015)
Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations
Liang Zhao et al.
APPLIED PHYSICS LETTERS (2015)
Plasma enhanced multistate storage capability of single ZnO nanowire based memory
Yunfeng Lai et al.
APPLIED PHYSICS LETTERS (2015)
Analysis of Partial Bias Schemes for the Writing of Crossbar Memory Arrays
An Chen
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
HfO2-Based OxRAM Devices as Synapses for Convolutional Neural Networks
Daniele Garbin et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Directed self-assembly of block copolymers for nanocircuitry fabrication
M. A. Morris
MICROELECTRONIC ENGINEERING (2015)
A General Design Strategy for Block Copolymer Directed Self-Assembly Patterning of Integrated Circuits Contact Holes using an Alphabet Approach
He Yi et al.
NANO LETTERS (2015)
Fabrication of periodic arrays of metallic nanoparticles by block copolymer templates on HfO2 substrates
Jacopo Frascaroli et al.
NANOTECHNOLOGY (2015)
Reconfigurable Memristive Device Technologies
Arthur H. Edwards et al.
PROCEEDINGS OF THE IEEE (2015)
Phase-Change and Redox-Based Resistive Switching Memories
Dirk J. Wouters et al.
PROCEEDINGS OF THE IEEE (2015)
All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics
Yoon Cheol Bae et al.
SCIENTIFIC REPORTS (2015)
Improved thermal stability and retention properties of Cu-Te based CBRAM by Ge alloying
Wouter Devulder et al.
JOURNAL OF MATERIALS CHEMISTRY C (2015)
High Aspect Ratio PS-b-PMMA Block Copolymer Masks for Lithographic Applications
F. Ferrarese Lupi et al.
ACS APPLIED MATERIALS & INTERFACES (2014)
Reliable Control of Filament Formation in Resistive Memories by Self-Assembled Nanoinsulators Derived from a Block Copolymer
Byoung Kuk You et al.
ACS NANO (2014)
Three-Dimensional Nanofabrication by Block Copolymer Self-Assembly
Caroline A. Ross et al.
ADVANCED MATERIALS (2014)
High-Performance a-IGZO Thin Film Diode as Selector for Cross-Point Memory Application
Adrian Chasin et al.
IEEE ELECTRON DEVICE LETTERS (2014)
Block Copolymer Lithography
Christopher M. Bates et al.
MACROMOLECULES (2014)
Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
Li Ji et al.
NANO LETTERS (2014)
Revealing Controllable Nanowire Transformation through Cationic Exchange for RRAM Application
Chun-Wei Huang et al.
NANO LETTERS (2014)
Formation and disruption of conductive filaments in a HfO2/TiN structure
S. Brivio et al.
NANOTECHNOLOGY (2014)
Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memory
Chung-Wei Hsu et al.
NANOTECHNOLOGY (2014)
The Interplay Between Electronic and Ionic Transport in the Resistive Switching Process of Random Access Memory Devices
B. Magyari-Koepe et al.
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 12 (2014)
Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells
Wouter Devulder et al.
ACS APPLIED MATERIALS & INTERFACES (2013)
Bipolar resistive switching of Au/NiOx/Ni/Au heterostructure nanowires
S. Brivio et al.
APPLIED PHYSICS LETTERS (2013)
Latch-up based bidirectional npn selector for bipolar resistance-change memory
Sungho Kim et al.
APPLIED PHYSICS LETTERS (2013)
Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory
Liang Zhao et al.
APPLIED PHYSICS LETTERS (2013)
Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited HfTiOx Nanolaminate
Bhaswar Chakrabarti et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar Array
Chun-Li Lo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
A Thermally Stable and High-Performance 90-nm Al2O3\Cu-Based 1T1R CBRAM Cell
Attilio Belmonte et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM
Yang Yin Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
A Comprehensive Crossbar Array Model With Solutions for Line Resistance and Nonlinear Device Characteristics
An Chen
IEEE TRANSACTIONS ON ELECTRON DEVICES (2013)
Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
Kuan-Liang Lin et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Engineered fabrication of ordered arrays of Au-NiO-Au nanowires
Daniele Perego et al.
NANOTECHNOLOGY (2013)
Rapid fabrication of self-ordered porous alumina with 10-/sub-10-nm-scale nanostructures by selenic acid anodizing
Osamu Nishinaga et al.
SCIENTIFIC REPORTS (2013)
Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3-x-based nanoionics devices
Rui Yang et al.
APPLIED PHYSICS LETTERS (2012)
Low-power resistive switching in Au/NiO/Au nanowire arrays
S. Brivio et al.
APPLIED PHYSICS LETTERS (2012)
Invited Paper: Thin-Film Ovonic Threshold Switch: Its Operation and Application in Modern Integrated Circuits
Wally Czubatyj et al.
ELECTRONIC MATERIALS LETTERS (2012)
Punchthrough-Diode-Based Bipolar RRAM Selector by Si Epitaxy
V. S. S. Srinivasan et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Highly scalable resistive switching memory cells using pore-size-controlled nanoporous alumina templates
Si-Hoon Lyu et al.
JOURNAL OF MATERIALS CHEMISTRY (2012)
Self-Assembly-Induced Formation of High-Density Silicon Oxide Memristor Nanostructures on Graphene and Metal Electrodes
Woon Ik Park et al.
NANO LETTERS (2012)
Metal-Oxide RRAM
H. -S. Philip Wong et al.
PROCEEDINGS OF THE IEEE (2012)
Directed Self-Assembly Defectivity Assessment (Part II)
Chris Bencher et al.
ALTERNATIVE LITHOGRAPHIC TECHNOLOGIES IV (2012)
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
L. Goux et al.
APPLIED PHYSICS LETTERS (2011)
Excellent Selector Characteristics of Nanoscale VO2 for High-Density Bipolar ReRAM Applications
Myungwoo Son et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Bipolar Nonlinear Ni/TiO2/Ni Selector for 1S1R Crossbar Array Applications
Jiun-Jia Huang et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Intrinsic Mechanisms of Memristive Switching
Kazuki Nagashima et al.
NANO LETTERS (2011)
Memory and Threshold Resistance Switching in Ni/NiO Core-Shell Nanowires
Li He et al.
NANO LETTERS (2011)
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures
Myoung-Jae Lee et al.
NATURE MATERIALS (2011)
Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires
Carlo Cagli et al.
SMALL (2011)
Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching
J. Joshua Yang et al.
ADVANCED MATERIALS (2010)
Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode
Jiun-Jia Huang et al.
APPLIED PHYSICS LETTERS (2010)
Block Copolymer Based Nanostructures: Materials, Processes, and Applications to Electronics
Ho-Cheol Kim et al.
CHEMICAL REVIEWS (2010)
Forming and switching mechanisms of a cation-migration-based oxide resistive memory
T. Tsuruoka et al.
NANOTECHNOLOGY (2010)
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon et al.
NATURE NANOTECHNOLOGY (2010)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Bipolar resistive switching in individual Au-NiO-Au segmented nanowires
Edward D. Herderick et al.
APPLIED PHYSICS LETTERS (2009)
Nonvolatile Bipolar Resistive Memory Switching in Single Crystalline NiO Heterostructured Nanowires
Keisuke Oka et al.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2009)
Reversible resistive switching behaviors in NiO nanowires
Sung In Kim et al.
APPLIED PHYSICS LETTERS (2008)
Memristive switching mechanism for metal/oxide/metal nanodevices
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2008)
Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
Daniele Ielmini et al.
JOURNAL OF APPLIED PHYSICS (2007)
Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy
B Fuhrmann et al.
NANO LETTERS (2005)
Large-scale hierarchical organization of nanowire arrays for integrated nanosystems
D Whang et al.
NANO LETTERS (2003)
Nanosphere lithography: A versatile nanofabrication tool for studies of size-dependent nanoparticle optics
CL Haynes et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2001)