4.7 Article

Growth of Amorphous Passivation Layer Using Phenethylammonium Iodide for High-Performance Inverted Perovskite Solar Cells

Journal

SOLAR RRL
Volume 4, Issue 2, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/solr.201900243

Keywords

amorphous; open-circuit voltage; perovskite solar cells; phenethylammonium iodide; surface passivation

Funding

  1. National Key R&D Program of China [2018YFC0910602]
  2. National Natural Science Foundation of China [61775145/61525503/61620106016/61835009/81727804/61804099]
  3. Postdoctoral Science Foundation China [2018M643178]
  4. (Key) Project of Department of Education of Guangdong Province [2015KGJHZ002/2016KCXTD007]
  5. Guangdong Natural Science Foundation Innovation Team [2014A030312008]
  6. Shenzhen Basic Research Project [JCYJ20170412110212234/JCYJ20160328144746940/JCYJ20170412105003520]
  7. JST-Mirai Program of Japan [JPMJMI17EA]

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Organic-inorganic lead halide perovskite solar cells have realized a rapid increase of power conversion efficiency (PCE) in the past few years. However, their performance still suffers trap-assisted decline due to defects at the surface and grain boundaries of the perovskite film. Herein, a phenethylammonium iodide-lead iodide (PEAI-PbI2) passivation layer is formed on the CH3NH3PbI3 perovskite film. The characterization results indicate that the PEAI covering layer leads to the reduction of surface defects and suppression of nonradiative recombination. By manipulating this surface passivation method, a remarkably improved V-OC of 1.16 V and an enhanced PCE of 20.8% are achieved.

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