Journal
JOURNAL OF CRYSTAL GROWTH
Volume 468, Issue -, Pages 666-670Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2017.01.030
Keywords
Doping; Low press. metalorganic vapor phase epitaxy; Zinc compounds; Semiconducting II-VI materials
Funding
- Japan Science and Technology Agency, JST
- Grants-in-Aid for Scientific Research [15H04253] Funding Source: KAKEN
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Photoluminescence (PL) spectra and electrical properties of both as-grown and annealed phosphorus-doped ZnTe layers grown by low-pressure metalorganic vapor phase epitaxy have been clarified as a function of reactor pressure or dopant transport rate. The carrier concentration of as-grown layer increases with decreasing reactor pressure or increasing dopant transport rate, in good agreement with PL behavior. Similar tendency is also found for annealed layer. Annealing treatment induces the enhancement of the carrier concentration, independent of reactor pressure or dopant transport rate. Through this study, a high carrier concentration near 10(19) cm(-3) has been attainable.
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