Journal
JOURNAL OF CRYSTAL GROWTH
Volume 477, Issue -, Pages 77-81Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2017.02.043
Keywords
Molecular beam epitaxy; Arsenides; Semiconducting III-V materials; High resolution X-ray diffraction; Doping
Funding
- APART Fellowship of the Austrian Academy of Sciences
- Austrian Science Fund (FWF) [P26100-N27 (H2N)]
- Gesellschaft fur Mikro- und Nanoelektronik (GMe)
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This work provides a comprehensive study of the incorporation behavior of B in growing GaAs under molecular beam epitaxy conditions. Structural characterization of superlattices revealed a strong dependence of the BAs growth rate on the GaAs growth rate used. In general, higher GaAs growth rates lead to a higher apparent BAs growth rate, although lower B cell temperatures showed saturation behavior. Each B cell temperature requires a minimum GaAs growth rate for producing smooth films. The B incorporation into single thick layers was found to be reduced to 75-80% compared to superlattice structures. The p-type carrier densities in 1000 nm thick layers were found to be indirectly proportional to the B content. Furthermore, 500 nm thick BxGa(1-x)As layers showed significantly lower carrier concentrations, indicating B segregation on the surface during growth of thicker layers. (C) 2017 The Authors. Published by Elsevier B.V.
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