Journal
JOURNAL OF CRYSTAL GROWTH
Volume 478, Issue -, Pages 187-192Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2017.09.007
Keywords
Atomic force microscopy; Computer simulation; Diffusion; Surface structure; Metalorganic vapor phase epitaxy; Nitrides
Funding
- German Research Foundation (DFG) within the Collaborative Research Center Semi-conductor Nanophotonics [CRC 787]
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Homoepitaxy on vicinal surfaces may proceed by either step-flow or step-bunching growth. This surface morphology transition is correlated with the inverse Ehrlich-Schwoebel barrier and the terrace width on the vicinal surface. We discuss a growth model based on the surface diffusion theory of Burton, Cabrera, Frank, and Schwoebel to account for conditions inducing the morphology transition. Based on a MonteCarlo method, the transition conditions of the diffusion model are investigated regarding the inverse Ehrlich-Schwoebel barrier, the diffusion length, the vicinal terrace width, and the adatom mean resident time. This provides insights into crucial parameters and allows to predict the growth morphology by correlating theory and growth parameters. The theoretical results are applied to control the homoepitaxial growth of AlN. (C) 2017 Elsevier B.V. All rights reserved.
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