Journal
JOURNAL OF CRYSTAL GROWTH
Volume 464, Issue -, Pages 226-230Publisher
ELSEVIER
DOI: 10.1016/j.jcrysgro.2016.10.085
Keywords
Doping; Metalorganic chemical vapor deposition; Oxides; Semiconducting II-VI materials; Light emitting diodes
Funding
- Furukawa Co., Ltd.
- MEXT of the Japan City Area Program of Shinji Lake Nakaumi
- Practical Application Research, Science and Technology Incubation Program in Advanced Regions by Japan Science and Technology Agency
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A ZnMgO:N/ZnO/ZnO:Ga single hetero-junction light emitting diode structure on Al2O3 (11 (2) over bar0) substrate was fabricated by metalorganic vapor phase epitaxy. By using ZnMgO:N as a substitute for a ZnO:N top layer of a homojunction LED, improved rectifying current-voltage characteristics were obtained. Although the device had a heating problem and the luminescent area was partly in the ZnMgO:N layer, a sharp ultraviolet electroluminescence emission at 3.17 eV was successfully observed at room temperature.
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