Journal
JOURNAL OF CRYSTAL GROWTH
Volume 464, Issue -, Pages 127-131Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2016.11.039
Keywords
Impurities; Polarity; N-polar; Metalorganic chemical vapor deposition; Nitrides
Funding
- Center for Low Energy Systems Technology (LEAST), one of six centers of STARnet, a Semiconductor Research Corporation program - MARCO
- DARPA
- Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California, Santa Barbara
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In this work, secondary ion mass spectroscopy was used to study carbon and oxygen impurity incorporation in N-polar [000-1] GaN films grown by MOCVD. The effects of growth temperature, V/III ratio, and precursor flows were studied within a regime relevant to low temperature (In,Ga)N:Mg growth for device structures containing high indium concentrations. For films grown without magnesium, oxygen levels were between 3 and 8x10(16) cm(-3) and did not depend strongly on the growth conditions. Mg-doped films yielded higher oxygen concentrations ranging from 8x10(16) to 4x10(17) cm(-3) depending on the gallium and magnesium precursor flow rates. The carbon concentration in the films varied significantly with different growth conditions, and was most affected by the growth temperature and the V/III ratio. With careful tuning of the growth parameters carbon and oxygen concentrations of 2 and 4x10(16) cm(-3), respectively, were achievable under a wide range of conditions.
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