Journal
JOURNAL OF CRYSTAL GROWTH
Volume 468, Issue -, Pages 541-546Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2016.11.017
Keywords
InSb; Quantum dots; Ge substrate; Molecular beam epitaxy
Funding
- Research Chair Grant
- National Science and Technology Development Agency (NSTDA), Thailand
- Asian Office of Aerospace Research and Development (AOARD) [FA 2386-14-1-4081]
- Office of Naval Research Global, Thailand Research Fund (TRF)
- National Nanotechnology Center (NANOTEC)
- ASEAN University Network/Southeast Asia Engineering Education Development Network (AUN/SEED-Net)
- Chulalongkorn University [CU-58-051-EN]
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In this work, we report on the growth of self-assembled InSb/GaAs quantum dots (QDs) on (001) Ge substrate by molecular beam epitaxy. Due to the polar/non-polar nature of GaAs grown on Ge, antiphase domains are formed. Effects of the domain and QD growth temperature on the morphology of realized QDs are presented. InSb QDs are mostly formed at the antiphase-domain boundaries (APBs). The QD size, shape and density are varied with the QD growth temperature. These free-standing QDs have irregular lens and stripe-shapes with {10n} side facets according to the analysis of atomic force microscopy images. InSb QDs is formed at the APBs, where two orthogonal GaAs surfaces are met.
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