Journal
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume 9, Issue 2, Pages -Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/2162-8777/ab6162
Keywords
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Funding
- National key Research and Development Program of China [2018YFB040650]
- National Natural Science Foundation of China (NSFC) [61774116, 61974112, 61974115]
- 111 Project [B12026]
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In this paper, we fabricated the vertical beta-Ga2O3 Schottky barrier diodes with floating metal ring (FMR) edge termination structure. As the distance between the major Schottky junction and the FMR increasing, the breakdown voltage increases to 143, 161, 188 and 172 V, respectively, about 20.17%, 35.29%, 57.98% and 44.54% improvement in comparison with that without FMR. Under constant current stress, the variation of applied voltage indicates that the barrier height increases by the electron capture at the interface states while the barrier height decreases by the electron release. Furthermore, based on the excellent fitting of G(p)/omega measurement data, the extracted trap levels are within the range of 0.87-0.90 eV below the conduction band edge and the corresponding trap density increases from 1.24 x 10(12) cm(-2).eV(-1) to 1.71 x 10(13) cm(-2).eV(-1), which is in good agreement with previously reported theoretical and experimental results. (C) The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.
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