Journal
JOURNAL OF COLLOID AND INTERFACE SCIENCE
Volume 503, Issue -, Pages 198-204Publisher
ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jcis.2017.05.006
Keywords
Direct Z-scheme; Oxygen vacancies; Interface electron transfer; Cds/ZnO; Hydrogen
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Funding
- National Natural Science Foundation of China [51402199, 51422210]
- Education Department of Liaoning Province [LZ2015060]
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The solid-state Z-scheme trinary/binary heterostructures show the advantage of utilizing the high-energy photogenerated charge carriers in photocatalysis. However, the key factors controlling such Z-scheme in the binary heterostructures are still unclear. In this paper, we showed that oxygen vacancies could act as an interface electron transfer mediator to promote the direct Z-scheme charge transfer process in binary semiconductor heterostructures of CdS/ZnS. Increasing the concentration of surface oxygen vacancies of ZnO crystal can greatly enhance photocatalytic hydrogen generation of CdS/ZnO heterostructure. This was attributed to the strengthened direct Z-scheme charge transfer process in CdS/ZnO, as evidenced by steady-state/time-resolved photoluminescence spectroscopy and selective photodeposition of metal particles on the heterostructure. (C) 2017 Elsevier Inc. All rights reserved.
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