4.6 Article

Facile in situ solution synthesis of SnSe/rGO nanocomposites with enhanced thermoelectric performance

Journal

JOURNAL OF MATERIALS CHEMISTRY A
Volume 8, Issue 3, Pages 1394-1402

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/c9ta11737g

Keywords

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Funding

  1. National Natural Science Foundation of China [51802034, 11674040, 51672270]
  2. Chongqing Research Program of Basic Research and Frontier Technology [cstc2018jcyjAX0346]
  3. Chongqing Entrepreneurship and Innovation Program for the Returned Overseas Chinese Scholars [cx2018020]
  4. Fundamental Research Funds for the Central Universities [2019CDQYCL003]
  5. Key Laboratory of Low-grade Energy Utilization Technologies and Systems, Ministry of Education, Chongqing University [LLEUTS-201802]
  6. National Training Program of Innovation and Entrepreneurship for Undergraduates [201810611045]
  7. Shenzhen Science and Technology Innovation Committee [JCYJ20170818155752559]
  8. EPSRC [EP/P510968/1]

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Constructing nanostructured composite architectures has been considered as an effective strategy to reduce the lattice thermal conductivity (kappa(L)) and enhance the dimensionless figure of merit (ZT) of thermoelectric materials. Herein, a series of SnSe/reduced graphene oxide (rGO)-x (x = 0.1, 0.3, 0.5, 0.7 wt%) nanocomposites are controllably synthesised in situ via a facile single-step bottom-up solution method, where rGO nanosheets are incorporated intimately into the SnSe matrix. Nanocompositing performs two key functions: (i) significantly reducing the lattice thermal conductivity of the material, which can be attributed to enhanced phonon scattering from high-density SnSe/rGO interfaces, and (ii) improving the electrical conductivity over the low temperature range, as result of an increased carrier concentration. The subsequent thermoelectric performance of SnSe/rGO sintered pellets has been optimised by tuning the rGO mass fraction, with SnSe/rGO-0.3 achieving kappa(L) = 0.36 W m(-1) K-1 at 773 K (cutting the kappa(L) of SnSe by 33%) to yield a maximum ZT of 0.91 at 823 K (representing a similar to 47% increase compared to SnSe). This study provides a new pathway to improve the thermoelectric performance of polycrystalline SnSe by way of engineering metal chalcogenide/rGO composite architectures at the nanoscale.

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