Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 167, Issue 2, Pages -Publisher
ELECTROCHEMICAL SOC INC
DOI: 10.1149/1945-7111/ab69f2
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Funding
- Ministry of Science and Technology of Taiwan [MOST 107-2221E-150-032, MOST 108-2221-E-024-006, MOST 108-2221-E150-013-MY2]
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In this study, metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs) based on Cu-doped ZnO (CZO) nanorods (NRs) were fabricated and investigated. The CZO NRs were prepared on a Corning glass substrate by the chemical bath deposition (CBD) method with photolithography processes. It was found that the diameter and length of ZnO NRs increased with Cu-doped concentration. The X-ray diffraction (XRD) analysis showed that the growth of NR arrays along the c-axis was hexagonal wurtzite crystal. Compared with pure ZnO NRs, it can be seen that the main UV peak (378 nm) of photoluminescence (PL) spectra showed a blue-shift phenomenon with the increase of Cu-doped concentration. Additionally, it was found that the rise and recovery time of such a fabricated PD were shortened under the UV illumination. The UV sensing properties of the CZO PDs were improved since the trapping and de-trapping of electrons by Cu-related complexes were faster than the adsorption and desorption of oxygen molecules. With a 3 V applied bias and 380 nm UV illumination, the optimal sensitivity of our PDs is 196.6. (c) 2020 The Electrochemical Society (ECS). Published on behalf of ECS by IOP Publishing Limited.
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