Journal
NANOSCALE
Volume 12, Issue 10, Pages 6057-6063Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/d0nr00447b
Keywords
-
Categories
Funding
- National Natural Science Foundation [21803032, 21525311, 21773027]
- Natural Science Foundation of Jiangsu Province [BK20180735]
- NUPTSF [NY219025]
Ask authors/readers for more resources
Layered semiconductors with broad photoabsorption, a long carrier lifetime and high carrier mobility are of crucial importance for high-performance optoelectronic and photovoltaic devices; however it is hard to satisfy these requirements simultaneously in a system due to the opposite dependence on the layer thickness. Herein, by means of ab initio time-domain nonadiabatic molecular dynamic simulations, we find a new mechanism in Bi2OS2 nanosheets inducing an anomalous layer-dependent property of carrier lifetimes, which makes the few layered Bi2OS2 a possible system for fulfilling the above requirements concurrently. It is revealed that the interlayer dipole-dipole interaction in few layered Bi2OS2 effectively breaks the two-fold degenerate orbitals of [BiS2] layers, which not only cuts down the overlap of the electron and hole wave functions, but also accelerates the electron decoherence process. This significantly suppresses the electron-hole recombination and prolongs the photogenerated carrier lifetime of few layered Bi2OS2. The mechanism unveiled here paves a possible way for developing advanced optoelectronic and photovoltaic devices through engineering interlayer dipole-dipole coupling.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available