Journal
PHYSICAL REVIEW B
Volume 101, Issue 9, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.101.094106
Keywords
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Funding
- Czech Science Foundation [19-09671S]
- European Structural and Investment Funds
- Ministry of Education, Youth and Sports of the Czech Republic through Programme Research, Development and Education [SOLID21-CZ.02.1.01/0.0/0.0/16_019/0000760]
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The electrical conductivity of epitaxial BaTiO3 films was studied by small-signal impedance spectroscopy at temperatures of 10-720 K using Pt-BaTiO3-SrRuO3 capacitors. The similar to 150-nm-thick BaTiO3 films possessed different lattice strains and degrees of oxygen deficiency. A crossover between the low-temperature hopping of small polarons and the high-temperature semiconductor- to metal-type behavior was demonstrated in all films. It was suggested that the small electron polarons originate from self-trapping at Ti in the stoichiometric tensilestrained film and from trapping at Ti next to the oxygen vacancy in the oxygen-deficient films. The conduction-band transport was ascribed to the thermally activated release of the trapped electrons. It was pointed out that the electronic release can mimic the motion of oxygen vacancies, which are actually immobile.
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