Solution-processed upconversion photodetectors based on quantum dots

By embedding silver nanoparticles in the electron transport layer, solution-processed quantum-dot-based photodetectors with a high photon-to-electron conversion efficiency of 6.5% and a low turn-on voltage of 2.5 V can be created for use in infrared imaging applications. Upconversion photodetectors convert photons from the infrared to the visible light spectrum and are of use in applications such as infrared detection and imaging. High-performance upconversion devices are, however, typically based on vacuum-deposited materials, which are expensive and require high operating voltages, which limits their implementation in flexible systems. Here we report solution-processed optical upconversion photodetectors with a high photon-to-photon conversion efficiency of 6.5% and a low turn-on voltage of 2.5 V. Our devices consist of a colloidal lead sulfide quantum dot layer for harvesting infrared light that is monolithically coupled to a cadmium selenide/zinc selenide quantum dot layer for visible-light emission. We optimized the charge-extraction layers in these devices by incorporating silver nanoparticles into the electron transport layers to enable carrier tunnelling. Our photodetectors exhibit a low dark current, high detectivity (6.4 x 10(12) Jones) and millisecond response time, and are compatible with flexible substrates. We also show that the devices can be used for in vitro bioimaging.