Journal
JOURNAL OF MATERIALS CHEMISTRY C
Volume 8, Issue 10, Pages 3498-3508Publisher
ROYAL SOC CHEMISTRY
DOI: 10.1039/c9tc06199a
Keywords
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Funding
- National Natural Science Foundation of China [51972055, 11974074, 51672044, 21701135, 21561031]
- Fundamental Research Funds for the Central Universities [2232017A-02, 2232018A3-03, 2232017D-26]
- Science and Technology Commission of Shanghai Municipality [18ZR1402000]
- DHU Distinguished Young Professor Program
- Shenzhen Science and Technology Research Project [JCYJ20180508152903208]
- Shenzhen Pengcheng Scholar Program [18520750400]
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A high-performance broadband photodetector based on a Zn-doped NiO/p-Si isotype heterojunction was successfully fabricated, which consisted of a Zn-doped NiO film on a Si substrate via a facile sol-gel method. The as-fabricated isotype heterojunction device displays an excellent broad-band (350-650 nm) detection performance with an outstanding external quantum efficiency (EQE) of 89.5% at a small reverse bias of -1 V and as high as similar to 184% at -4 V. Moreover, the maximum photo-dark current ratio (switching ratio) of 1793% was achieved at -1 V under illumination with 650 nm light (0.5 mW cm(-2)); additionally, the response time of the as-fabricated device was less than 0.3 s. Such a high-performance of the Zn-doped NiO/p-Si isotype heterojunction photodetector guarantees its potential use in UV-visible low-voltage optoelectronic devices, especially for weak-signal detection and portable equipment.
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