4.8 Article

Mechanically Robust All-Polymer Solar Cells from Narrow Band Gap Acceptors with Hetero-Bridging Atoms

Journal

JOULE
Volume 4, Issue 3, Pages 658-672

Publisher

CELL PRESS
DOI: 10.1016/j.joule.2020.01.014

Keywords

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Funding

  1. Swedish Research Council
  2. Swedish Research Council Formas
  3. Wallenberg Foundation [2017.0186, 2016.0059]
  4. NSFC project [61774077]
  5. Guangzhou Municipal Science and Technology Bureau [201804010501]
  6. Department of Education of Guangdong Province [2018GKTSCX041, 2017GKCXTD001, 2017GKQNCX005]
  7. Guangdong Province Higher Vocational Colleges and Schools Pearl River Scholar Funded Scheme (2015)
  8. Guangdong Province Higher Vocational Colleges and Schools Pearl River Scholar Funded Scheme (2018)
  9. Guangzhou Science and Technology Plan [201804010295, 201904010381]
  10. China Scholarship Council [201908440047]
  11. Collaborative Innovation Center of Suzhou Nano Science and Technology of Jiangsu Province
  12. Collaborative Innovation Center for New-type Urbanization and Social Governance of Jiangsu Province
  13. Innovation fund Denmark (INKA project)
  14. Sino-Danish Centre for Education and Research (SDC)
  15. Wearable Platform Materials Technology Center (WMC) - National Research Foundation of Korea (NRF) Grant by the Korean Government (MSIT) [2016R1A5A1009926]

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We developed three narrow band-gap polymer acceptors PF2-DTC, PF2-DTSi, and PF2-DTGe with different bridging atoms (i.e., C, Si, and Ge). Studies found that such different bridging atoms significantly affect the crystallinity, extinction coefficient, electron mobility of the polymer acceptors, and the morphology and mechanical robustness of related active layers. In all-polymer solar cells (all-PSCs), these polymer acceptors achieved high power conversion efficiencies (PCEs) over 8.0%, while PF2-DTSi obtained the highest PCE of 10.77% due to its improved exciton dissociation, charge transport, and optimized morphology. Moreover, the PF2-DTSi-based active layer showed excellent mechanical robustness with a high toughness value of 9.3 MJ m(-3) and a large elongation at a break of 8.6%, which is a great advantage for the practical applications of flexible devices. As a result, the PF2-DTSi-based flexible all-PSC retained >90% of its initial PCE (6.37%) after bending and relaxing 1,200 times at a bending radius of similar to 4 mm.

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