Journal
PHOTONICS
Volume 7, Issue 1, Pages -Publisher
MDPI
DOI: 10.3390/photonics7010004
Keywords
semiconductor laser; InP semiconductor optical amplifier; hybrid integration; narrow intrinsic linewidth; dual-wavelength laser; laser frequency comb; integrated photonic circuits; low-loss Si3N4 waveguides
Categories
Funding
- IOP Photonic Devices program of RVO (Rijksdienst voor Ondernemend Nederland), a division of the Ministry for Economic Affairs, the Netherlands
- European Union's Horizon 2020 research and innovation programme [780502, 688519, 762055]
- Dutch Research Council (NWO) project Light and sound-based signal processing in silicon nitride (Vidi program) [15702]
- Dutch Research Council (NWO) project Functional hybrid technologies (Memphis II program) [13537]
- Dutch Research Council (NWO) project On-chip photonic control of gigahertz phonons (Start Up program) [STU.018-2.002]
Ask authors/readers for more resources
Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth, as well as compatibility for embedding into integrated photonic circuits, are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around a 1.55 mu m wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
