Journal
PHYSICAL REVIEW B
Volume 101, Issue 14, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.101.144404
Keywords
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Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan [16H06332]
- NIMS MI2I
- Grants-in-Aid for Scientific Research [16H06332] Funding Source: KAKEN
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We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented junctions Co/MgO/Co(111) and Ni/MgO/Ni(111). The Co-based junction is shown to have a TMR ratio over 2000%, which is one order higher than that of the Ni-based one. The high TMR ratio is attributed to the interfacial resonance effect: The interfacial d-p antibonding states are formed close to the Fermi level in the majority-spin channel and these states in both interfaces resonate with each other. This differs essentially from the conventional coherent tunneling mechanism of high TMR ratios in Fe(Co)/MgO/Fe(Co)(001).
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