Journal
JOURNAL OF APPLIED PHYSICS
Volume 121, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4982354
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Funding
- Joint Advanced Technology Program (JATP) [JATP0152]
- Department of Science and Technology (DST) under its Water Technology Initiative (WTI) [DST01519]
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We report on the highest responsivity for III-nitride Metal Semiconductor Metal solar-blind photodetectors on sapphire. Devices on unintentionally doped AlGaN epilayers grown by Metal Organic Chemical Vapor Deposition exhibited sharp absorption cut-off in the range of 245-290 nm. Very high responsivity >5 A/W at 10V bias was achieved with visible rejection exceeding three orders of magnitude for front illumination. Compared to the responsivity values reported in the literature for state-of-the-art solar-blind photodetectors, this work presents the highest values of responsivity at a given bias and up to sub-250 nm detection threshold. The high responsivity is attributed to an internal gain mechanism operating on these devices. The reverse-bias leakage current across these samples was found to be dominated by thermionic field emission at low biases and Poole-Frenkel emission from a deep trap level (0.7 eV from the conduction band-edge for Al0.50Ga0.50N) at high biases. Published by AIP Publishing.
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